Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1992-12-10
1995-04-04
Gregory, Bernarr E.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257350, 257352, H01L 2900
Patent
active
H00014230
ABSTRACT:
The present invention provides a method for fabricating a silicon-on-insulator voltage multiplier. The method comprises the steps of: forming a first silicon layer having a first concentration of a first dopant with a first polarity on a silicon wafer having a second concentration of a second dopant with a second polarity opposite the first polarity to create a diode junction; forming a second silicon layer on the first silicon layer, the second silicon layer having a third concentration of a third dopant having the first polarity, where the third concentration is greater than the first concentration of the first dopant; forming a silicon dioxide layer on the second silicon layer by thermal oxidation; bonding an insulating substrate to the silicon dioxide layer to create a bonded wafer, where the insulating substrate is selected from the group consisting of quartz, glass, sapphire, and silicon dioxide on silicon; thinning the silicon wafer to form a thinned silicon layer; etching the bonded wafer to form a plurality of separate diodes having sloped sidewalls and to expose selected regions of the insulating substrate; forming an insulating silicon layer on the selected regions of the insulating substrate and on the separate diodes; exposing selected regions of the thinned silicon layer and regions of the second silicon layer of each of the diodes; and forming metal interconnects between the exposed selected regions of the thinned silicon layer of one of the diodes with the silicon layer of another of the diodes.
REFERENCES:
patent: 4241360 (1980-12-01), Hambor et al.
patent: 4501060 (1985-02-01), Frye et al.
patent: 4520461 (1985-05-01), Simko
patent: 4575746 (1986-03-01), Dingwall
patent: 4922403 (1990-05-01), Feller
patent: 5014097 (1991-05-01), Kazerounian
"Method to Form Very Thin SOI Films", IBM Technical Disclosure Bulletin, . 35, #2 Jul. 1992, pp. 37-38.
"Process for Fabrication of Very Thin Epitaxial Silicon Films Over Insulating Layers," IBM Technical Disclosure Bulletin, vol. 35, #2, Jul. 1992, pp. 247-249.
Flesner Larry D.
Garcia Graham A.
Imthurn George P.
Fendelman Harvey
Gregory Bernarr E.
Kagan Michael A.
Keough Thomas Glenn
The United States of America as represented by the Secretary of
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