Method for fabricating a short channel field-effect transistor

Details Method for fabricating a short channel field-effect transistor Method for fabricating a short channel field-effect transistor

2006-10-31

2006-10-31

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

C438S736000, C257SE21444, C257SE21453

Reexamination Certificate

active

07129152

ABSTRACT:
A method for fabricating a short channel field-effect transistor is presented. A sublithographic gate sacrificial layer is formed, as are spacers at the side walls of the gate sacrificial layer. The gate sacrificial layer is removed to form a gate recess and a gate dielectric and a control layer are formed in the gate recess. The result is a short channel field-effect transistor with minimal fluctuations in the critical dimensions in a range below 100 nanometers.

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Copy of International Search Report from International application number PCT/DE03/02072.
Copy of International Examination Report from International application number PCT/DE03/02072.

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