Method for fabricating a sensor on a probe tip used for atomic f

Details Method for fabricating a sensor on a probe tip used for atomic f Method for fabricating a sensor on a probe tip used for atomic f

1995-05-11

1996-12-03

Berman, Jack I.

Radiant energy

Inspection of solids or liquids by charged particles

250234, 73105, 376124, 376164, 136228, H01J 3726

Patent

active

055810837

ABSTRACT:
Nanometer holes can be reliably and repeatedly defined in the tips of cantilevered probes and used in various types of scanning microscopy by voltaicly defining the hole within a conductive layer disposed on the tip. The field strengths of the apex of the tip are sufficient to cause evaporation of the metal or conductive material from the apex onto an opposing sample substrate. The hole opens on the apex of the tip and is self-limited by the inherent threshold voltage strength required for vaporization, which voltage strength falls off rapidly from the tip. The hole may be defined in conductive layers in various combinations with oxide layers, other metal layers and semiconductor materials to define Schottky diodes, thermocouple junctions, near-field optical detectors, and atomic force tips. As a result, two or more physical interactions may be simultaneously exploited between the fabricated tip and the scanned sample from which a scanned image may be produced.

REFERENCES:
patent: 587568 (1897-08-01), Burton
patent: 3723690 (1973-03-01), Nakada et al.
patent: 3974357 (1976-08-01), Saito et al.
patent: 3988563 (1976-10-01), Swengel, Sr. et al.
patent: 4045311 (1977-08-01), Matsui et al.
patent: 4069121 (1978-01-01), Baud et al.
patent: 4278871 (1981-07-01), Schmidt-Kufeke et al.
patent: 4393292 (1983-07-01), Inoue
patent: 4866237 (1989-09-01), Inoue
patent: 4992639 (1991-02-01), Watkins et al.
patent: 5166520 (1992-11-01), Prater et al.
patent: 5281788 (1994-01-01), Abiko et al.
patent: 5317141 (1994-05-01), Thomas
patent: 5322985 (1994-06-01), Ohba et al.
patent: 5354985 (1994-10-01), Quate
Eigler et al., "Positioning Single Atoms with a Scanning Tunneling Microscope," Nature, v 344, pp. 524-526, Apr. 5, 1990.
Mamin et al., "Atomic Emission from a Gold Scanning-Tunneling-Microscope Tip," Physical Review Letters, v 65, n 19, pp. 2418-2421, 1990.
Whitman, "Manip. of Adsorbed Atoms & Creation of New Struc. on Room-temp. Surfaces w/a Scanning Tunneling Microsope," Science, pp. 1206-1210, Mar. 1991.
Betzig et al., "Near-Field Optics: Microscopy, Spectroscopy & Surface Modif. Beyond the Diffraction Limit," Science, v 257, pp. 189-195, 1992.
Majumdar et al., "Nanometer-Scale Lithography Using the Atomic Force Microsope," Appl. Phys. Lett., v61, n19, pp. 2293-2295, 1992.
Majumder et al., "Thermal Imaging Using the Atomic Force Microscope," Appl. Phys. Lett., v 62, n20, pp. 2501-2503, 1993.
Betzig et al., "Single Molecules Observed by Near-Field Scanning Optical Microscopy," Science, v 262, pp. 1422-1425, 1993.
Lyo et al., "Field-Induced Nanometer--to Atomic Scale Manip. of Silicon Surfaces of the STM," Science, v 253, pp. 173-176.

Affiliated with

Also associated with

Rating

Method for fabricating a sensor on a probe tip used for atomic f does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating a sensor on a probe tip used for atomic f, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating a sensor on a probe tip used for atomic f will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-787289