Method for fabricating a semiconductor on insulator device

Details Method for fabricating a semiconductor on insulator device Method for fabricating a semiconductor on insulator device

1996-05-02

1998-08-11

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438165, 438236, 438311, 438412, H01L 218249, H01L 2184

Patent

active

057926786

ABSTRACT:
A semiconductor on insulator structure (50) includes a silicon layer (30) formed on an insulating substrate (20). The silicon layer (30) is partitioned into two sections (32, 34) which are electrically isolated from each other. The thickness of the silicon layer (30) in a first section (32) of the silicon layer (30) is adjusted independently from the thickness of the silicon layer (30) in a second section (34) of the silicon layer (30). Independently adjusting the thickness of the silicon layer (30) allows optimizing the performance of semiconductor devices (60, 80) fabricated in the first and second sections (32, 34) of the semiconductor on insulator structure (50).

REFERENCES:
patent: 5013681 (1991-05-01), Godbey et al.
patent: 5047356 (1991-09-01), Li et al.
patent: 5087580 (1992-02-01), Eklund
patent: 5100810 (1992-03-01), Yoshimi et al.
patent: 5116771 (1992-05-01), Karlukar
patent: 5273915 (1993-12-01), Huang et al.
patent: 5279978 (1994-01-01), See et al.
patent: 5364800 (1994-11-01), Joyner
patent: 5439836 (1995-08-01), Giffard
patent: 5567966 (1996-10-01), Hwang

Affiliated with

Also associated with

Rating

Method for fabricating a semiconductor on insulator device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating a semiconductor on insulator device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating a semiconductor on insulator device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-388462