Method for fabricating a semiconductor having a field zone

Details Method for fabricating a semiconductor having a field zone Method for fabricating a semiconductor having a field zone

2007-09-11

2007-09-11

Ahmed, Shamim (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

C438S133000, C438S135000, C438S138000, C438S494000, C438S495000, C257S107000, C257S110000, C257S133000, C257S655000, C257S657000

Reexamination Certificate

active

11207525

ABSTRACT:
A method for fabricating a semiconductor and at least one second semiconductor zone of a semiconductor component having a semiconductor body having a first semiconductor zone. At least one field zone arranged in an edge region of the semiconductor body is reduced in size by means of an etching method. In another embodiment, the semiconductor body is partially removed in a region outside the first semiconductor zone. At least one second semiconductor zone is then fabricated in the partially removed region.

REFERENCES:
patent: 6110763 (2000-08-01), Temple
patent: 6162695 (2000-12-01), Hwang et al.
patent: 59075658 (1984-04-01), None
patent: 00/38242 (2000-06-01), None
patent: 02/49114 (2002-06-01), None
B. Jayant Baliga, “Power Semiconductor Devices”, PWS Publishing Company Boston 1996, pp. 82-99.

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