Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Reexamination Certificate
2011-07-05
2011-07-05
Picardat, Kevin M (Department: 2822)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
C438S162000, C438S407000, C438S527000, C438S529000, C438S530000, C438S532000
Reexamination Certificate
active
07972947
ABSTRACT:
In a method for fabricating a semiconductor element in a substrate, first implantation ions are implanted into the substrate, whereby micro-cavities are produced in a first partial region of the substrate. Furthermore, pre-amorphization ions are implanted into the substrate, whereby a second partial region of the substrate is at least partly amorphized, and whereby crystal defects are produced in the substrate. Furthermore, second implantation ions are implanted into the second partial region of the substrate. Furthermore, the substrate is heated, such that at least some of the crystal defects are eliminated using the second implantation ions. Furthermore, dopant atoms are implanted into the second partial region of the substrate, wherein the semiconductor element is formed using the dopant atoms.
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Giles Luis-Felipe
Hoffmann Thomas
Stapelmann Chris
Au Bac H
IMEC VZW.
Infineon - Technologies AG
Picardat Kevin M
Slater & Matsil L.L.P.
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