Method for fabricating a semiconductor device with laser program

Details Method for fabricating a semiconductor device with laser program Method for fabricating a semiconductor device with laser program

1995-03-30

1997-06-24

Tsai, Jey

Semiconductor device manufacturing: process

Including control responsive to sensed condition

Interconnecting plural devices on semiconductor substrate

438 13, 438601, H01L 2170, H01L 2700

Patent

active

056417012

ABSTRACT:
A method for fabricating a semiconductor device includes the steps of: forming fuses (40) and conductive pads (46) above a semiconductor substrate (43); depositing a layer of cap oxide (44) over the fuses and the conductive pads; sintering the cap oxide; etching back the layer of cap oxide until the top surface of an insulator (42) over the fuses and the top surfaces of the conductive pads are exposed; performing electrical tests (48) by way of the conductive pads; trimming (50) at least a part of the fuses with a laser beam; depositing a silicon nitride layer (52) overall; depositing a mask coating over the silicon nitride; patterning the mask coating (54) to expose the conductive pads; and etching the mask coating and the silicon nitride layer to expose the conductive pads.

REFERENCES:
patent: 5241212 (1993-08-01), Motonami et al.
patent: 5252844 (1993-10-01), Takagi
patent: 5326709 (1994-07-01), Moon et al.
patent: 5444012 (1995-08-01), Yoshizumi et al.

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