Method for fabricating a semiconductor device with bipolar trans

Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Self-aligned

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438368, 438362, H01L 21326

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active

058438289

ABSTRACT:
A semiconductor device with a bipolar transistor that enables to realize a reliable, electric connection of an intrinsic base region with a base electrode is provided. A semiconductor substructure has a surface area. An intrinsic base region is formed in the surface area. An emitter region is formed in the surface area to be surounded by the intrinsic base region, and an emitter electrode is formed to be contacted with the emitter region. An insulator is formed to surround the emitter electrode. A base electrode is formed not to be contacted with the intrinsic base region A conductive region is formed to be contacted with the intrinsic base region and the base electrode. The substructure has a recess formed on the surface area. The conductive region is produced by supplying a conductive material to the recess to be contacted with the intrinsic base region and the base electrode. The intrinsic base region is electrically connected to the base electrode through the conductive region. The recess is preferably produced by oxidizing a part of the surface area to form an oxide and removing the oxide.

REFERENCES:
patent: 4483726 (1984-11-01), Isaac et al.
patent: 4994400 (1991-02-01), Yamaguchi et al.
patent: 4996581 (1991-02-01), Hamasaki
patent: 5599723 (1997-02-01), Sato
"A Novel Self-Aligned Epitaxial Base Transistor"; H. Fujimaki et al.; 1991 IEEE; Electron Devices Group, Tokyo, Japan; pp. 59-62.
T.H. Ning et al.; "Self-Aligned Bipolar Transistors for High-Performance and Low-Power-Delay VLSI"; IEEE Transactions on Electron Devices, vol. ED-28, No. 9 Sep. 1981, pp. 1010-1013.

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