Method for fabricating a semiconductor device with...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation

Reexamination Certificate

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C438S128000, C438S129000, C438S630000, C438S633000, C438S634000, C257S208000, C257S211000, C257S775000

Reexamination Certificate

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07897499

ABSTRACT:
A method for fabricating a semiconductor device includes forming electrode patterns over a substrate, wherein the electrode patterns include a hard mask, forming a passivation layer on the electrode patterns, forming an insulation layer on the passivation layer, filling a space between the electrode patterns, planarizing the insulation layer until shoulder portions of the hard mask are planarized, forming a mask pattern on a resultant structure, and etching a portion of the insulation layer to form a contact hole.

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patent: 2007/0275555 (2007-11-01), Kim
patent: 2005-0038872 (2005-04-01), None
Office Action issued from the Korean Patent Office on Nov. 15, 2007.
M.S. Lee et al., “Highly Manufacturable Landing Plug Contact Formation for 80nm Technology and Beyond,” The 12thKorean Conference on Semiconductors, pp. 433-434 and partial Table of Contents (2005).

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