Method for fabricating a semiconductor device with...

Details Method for fabricating a semiconductor device with... Method for fabricating a semiconductor device with...

2011-03-01

2011-03-01

Brewster, William M (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S128000, C438S129000, C438S630000, C438S633000, C438S634000, C257S208000, C257S211000, C257S775000

Reexamination Certificate

active

07897499

ABSTRACT:
A method for fabricating a semiconductor device includes forming electrode patterns over a substrate, wherein the electrode patterns include a hard mask, forming a passivation layer on the electrode patterns, forming an insulation layer on the passivation layer, filling a space between the electrode patterns, planarizing the insulation layer until shoulder portions of the hard mask are planarized, forming a mask pattern on a resultant structure, and etching a portion of the insulation layer to form a contact hole.

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Office Action issued from the Korean Patent Office on Nov. 15, 2007.
M.S. Lee et al., “Highly Manufacturable Landing Plug Contact Formation for 80nm Technology and Beyond,” The 12thKorean Conference on Semiconductors, pp. 433-434 and partial Table of Contents (2005).

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