Method for fabricating a semiconductor device using a porous sil

Details Method for fabricating a semiconductor device using a porous sil Method for fabricating a semiconductor device using a porous sil

1994-12-23

1995-08-29

Breneman, R. Bruce

Etching a substrate: processes

Etching of semiconductor material to produce an article...

H01L 2120

Patent

active

054459915

ABSTRACT:
A method for fabricating a silicon diaphragm comprises the steps of preparing an n-type silicon substrate; diffusing n.sup.+ impurities in the silicon substrate to form an n.sup.+ diffusion region in a part of the upper wall thereof; growing an n-type silicon epitaxial layer thereon; forming a through-hole in the n-type silicon epitaxial layer to expose a part of the n.sup.+ diffusion region; performing an anodic reaction in an HF solution to make the n.sup.+ diffusion region a porous silicon layer; etching the porous silicon layer to form an air-gap;and, sealing the through-hole.

REFERENCES:
patent: 3976511 (1976-08-01), Johnson
patent: 5380373 (1995-01-01), Kimura et al.
M. Hirata et al., "Silicon diaphragm pressure sensors fabricated by anodic xidation etch-stop," Send. Actuators (Switzerland), vol. 13, No. 13, pp. 63-70, Jan. 1988.
X. G. Zhang, et al., "Porous silicon formation and electropolishing of silicon by anodic polarization in HF solution," J. Electrochem. Soc., vol. 136, No. 5, pp. 1561-1565, May 1989.

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