Method for fabricating a semiconductor device that includes...

Details Method for fabricating a semiconductor device that includes... Method for fabricating a semiconductor device that includes...

2005-03-01

2005-03-01

Smoot, Stephen W. (Department: 2813)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Subsequent separation into plural bodies

C438S479000, C438S796000

Reexamination Certificate

active

06861335

ABSTRACT:
A spacer layer is formed on a single-crystal substrate and an epitaxially grown layer composed of a group III-V compound semiconductor layer containing a nitride or the like is further formed on the spacer layer. The epitaxially grown layer is adhered to a recipient substrate. The back surface of the single-crystal substrate is irradiated with a light beam such as a laser beam or a bright line spectrum from a mercury vapor lamp such that the epitaxially grown layer and the single-crystal substrate are separated from each other. Since the forbidden band of the spacer layer is smaller than that of the single-crystal substrate, it is possible to separate the thin semiconductor layer from the substrate by decomposing or fusing the spacer layer, while suppressing the occurrence of a crystal defect or a crack in the epitaxially grown layer.

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patent: 5895223 (1999-04-01), Peng et al.
patent: 6071795 (2000-06-01), Cheung et al.
patent: 6559075 (2003-05-01), Kelly et al.
patent: 6596079 (2003-07-01), Vaudo et al.
patent: 20000-91632 (2000-03-01), None
patent: 2001-501778 (2001-02-01), None
patent: WO 9814986 (1998-04-01), None

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