Method for fabricating a semiconductor device that includes...

Details Method for fabricating a semiconductor device that includes... Method for fabricating a semiconductor device that includes...

2011-07-26

2011-07-26

Smoot, Stephen W (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S675000, C438S783000, C257SE21576

Reexamination Certificate

active

07985675

ABSTRACT:
A semiconductor device includes: a semiconductor substrate; a first insulating film (third insulating film24) formed on the semiconductor substrate, having a first trench (second interconnect trench28), and having a composition ratio varying along the depth from an upper face of the first insulating film; and a first metal interconnect (second metal interconnect25) filling the first trench (second interconnect trench28). The mechanical strength in an upper portion of the first insulating film (third insulating film24) is higher than that in the other portion of the insulating film (third insulating film24).

REFERENCES:
patent: 2001/0010970 (2001-08-01), Uglow et al.
patent: 2004/0061236 (2004-04-01), Koide
patent: 2004/0089924 (2004-05-01), Yuasa et al.
patent: 2004/0135255 (2004-07-01), Matsunaga et al.
patent: 2005/0023689 (2005-02-01), Nicholson et al.
patent: 2005/0064699 (2005-03-01), Kondo et al.
patent: 2005/0161827 (2005-07-01), Andideh et al.
patent: 2005/0167844 (2005-08-01), Ohto et al.
patent: 2005/0263857 (2005-12-01), Yuasa et al.
patent: 2006/0175705 (2006-08-01), Tsutsue et al.
patent: 2004-146798 (2004-05-01), None
patent: 2005-051214 (2005-02-01), None

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