Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-04-25
2006-04-25
Dang, Trung (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S663000, C438S664000, C438S682000
Reexamination Certificate
active
07033932
ABSTRACT:
The present invention can protect from degradation of product reliability of a semiconductor caused during formation of a salicide suppression layer. In order to achieve this, unlike the conventional method in which the sidewall spacer of the gate electrode and the salicide suppression layer in the non-salicide region are formed through two etching processes, the salicide suppression layer and the sidewall spacer are formed at the same time with one etching process after the salicide suppression substance and the sidewall spacer substance are sequentially formed in the present invention, such that it is possible to efficiently prevent an undercut effect from occurring at the spacer side during the etching process for forming the salicide suppression layer, and to effectively prevent the surface of the semiconductor substrate from being damaged.
REFERENCES:
patent: 5946573 (1999-08-01), Hsu
patent: 6008077 (1999-12-01), Maeda
patent: 6025267 (2000-02-01), Pey et al.
patent: 6063706 (2000-05-01), Wu
patent: 6100161 (2000-08-01), Yu et al.
patent: 6156593 (2000-12-01), Peng et al.
patent: 6265271 (2001-07-01), Thei et al.
patent: 6277683 (2001-08-01), Pradeep et al.
patent: 6468904 (2002-10-01), Chen et al.
Dang Trung
DongbuAnam Semiconductor Inc.
Fortney Andrew D.
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