Method for fabricating a semiconductor device having a conductiv

Details Method for fabricating a semiconductor device having a conductiv Method for fabricating a semiconductor device having a conductiv

1992-07-27

1993-10-19

Dees, Carl F.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

437228, C23F 100, H01L 21302

Patent

active

052542173

ABSTRACT:
A method for patterning a conductive metal oxide film on a substrate surface by means of an oxygen plasma etching process. In one embodiment, a substrate (10) is provided having a ruthenium oxide layer (14) overlying a dielectric layer (12). The substrate is placed on an electrode (24) positioned in a vacuum chamber (20) and the vacuum chamber is evacuated to a low pressure. Oxygen gas is introduced to the vacuum chamber and RF power is applied to form an oxygen plasma within the vacuum chamber. The oxygen plasma preferentially etches the ruthenium oxide layer (14) and does not etch the underlying dielectric layer (12). The oxygen plasma etching process can be used to form high resolution ruthenium oxide features during semiconductor device fabrication of ferroelectric capacitors (60) and other electronic components.

REFERENCES:
patent: 3698078 (1972-10-01), Redington
patent: 4357369 (1982-11-01), Kilichowski et al.
patent: 5003428 (1991-03-01), Shepherd
patent: 5118382 (1992-06-01), Cronin et al.
patent: 5139974 (1992-08-01), Sandhu et al.
"Reactions of Oxygen with the Platinum Metals: II-Oxidation of Ruthenium, Rhodium, Iridum and Osmium", J. C. Chaston, Platinum Metals Review, (9), 1965, pp. 51-56.
"Plasma Etching of RuO2 Thin Films", Jpn. J. Appl. Phys. vol. 31 (1992) pp. 135-138, Part 1, No. 1 Jan. 1992.

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