Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
2007-04-10
2007-04-10
Picardat, Kevin M. (Department: 2822)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
C438S682000, C438S683000
Reexamination Certificate
active
10780867
ABSTRACT:
A method for fabricating semiconductor devices includes forming a protective layer on a metallic layer prior to forming a metallic silicide layer, the protective layer having a thickness greater than that of the metallic layer.
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J. Fukuhara et al., “The Orientation of Blanket W-CVD on the underlayer Ti/TiN studied by XRD,” ADMETA 2000: Asian Session, pp. 71 and 72.
Kunihiro Fujii et al., “Sub-Quarter Micron Titanium Salicide Technology With In-Situ Silicidation Using High-Temperature Sputtering,” 1995 Symposium on VLSI Technology Digest of Technical Papers, pp. 57 and 58.
Oki Electric Industry Co. Ltd.
Picardat Kevin M.
Volentine & Whitt P.L.L.C.
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