Method for fabricating a semiconductor device having a...

Details Method for fabricating a semiconductor device having a... Method for fabricating a semiconductor device having a...

2006-10-10

2006-10-10

Smith, Zandra V. (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S945000, C438S946000, C438S597000, C257SE21002

Reexamination Certificate

active

07119014

ABSTRACT:
A method for fabricating a semiconductor memory device includes the consecutive steps of consecutively depositing metallic, nitride and oxide films on an underlying insulating film, patterning the nitride and oxide films to allow the oxide film to have a patterned area smaller than the patterned area of the nitride film, patterning the metallic film by using the nitride and oxide films as a mask, forming a side-wall film having a tapered mesa structure on the oxide, nitride and metallic films, embedding the side-wall oxide film by an interlayer dielectric film, and forming a contact hole in the interlayer dielectric film and the underlying oxide film while using the side-wall oxide film as an etch stopper.

REFERENCES:
patent: 5773341 (1998-06-01), Green et al.
patent: 5981356 (1999-11-01), Hsueh et al.
patent: 6235620 (2001-05-01), Saito et al.
patent: 6576509 (2003-06-01), Toyokawa et al.
patent: 1246727 (2000-03-01), None
patent: 2000-31277 (2000-01-01), None
Chinese Office Action dated Sep. 23, 2005 with an English translation.

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