Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of...
Reexamination Certificate
2002-11-12
2004-04-13
Ghyka, Alexander (Department: 2812)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
C438S800000, C438S935000, C438S941000, C414S935000, C414S941000, C029S025010
Reexamination Certificate
active
06720274
ABSTRACT:
FIELD OF THE INVENTION
The present invention relates to a method for fabricating a semiconductor device and a substrate processing apparatus; and, more particularly, to a semiconductor device fabricating method including a depressurization process and a substrate processing apparatus performing same.
BACKGROUND OF THE INVENTION
Referring to
FIG. 1
, there is illustrated a conventional substrate processing apparatus having a vertical type reaction furnace.
In the substrate processing apparatus, a reaction tube
1
is mounted on a manifold
2
, which also supports an inner tube
3
that is vertically aligned with the reaction tube
1
. The reaction tube
1
is enclosed by a tubular heater
4
, wherein the reaction tube
1
and the tubular heater
4
constitute a reaction furnace.
The interior of the reaction tube
1
constitutes a hermetically sealed reaction chamber
5
, which communicates with an airtight waiting room
6
defined within a load-lock chamber
7
connected to a lower portion of the manifold
2
. Further, installed in the load-lock chamber
7
is a boat elevator
30
for loading and unloading a substrate holder
8
(hereinafter, referred to as a boat
8
) into and from the reaction chamber
5
, wherein an elevator cap
9
is used to hermetically close the reaction chamber
5
after the boat
8
is completely loaded thereinto.
The load-lock chamber
7
has a gate valve therein (not shown), and a wafer transferring device (not shown) is installed outside the load lock chamber
7
. The wafer transferring device performs loading and unloading of substrates
10
such as Si wafers (hereinafter, referred to as wafers
10
) via the gate valve, while the boat
8
is stationed in the load-lock chamber
7
.
Connected to the manifold
2
are a first gas supply line
11
and a first exhaust line
13
, wherein the first gas supply line
11
introduces gas to the bottom portion of the inner tube
3
. In a similar fashion, a second gas supply line
12
and a second exhaust line
14
are connected to the load-lock chamber
7
. The exhaust lines
13
,
14
are connected to an exhaust system (not shown) via air valves
15
,
16
, respectively.
The boat
8
holding a predetermined number of wafers
10
is loaded into the reaction chamber
5
, which is then vacuum-evacuated, and the boat
8
and the wafers
10
are heated by the heater
4
therein. A reaction gas then is supplied to the reaction chamber
5
through the first gas supply line
11
, while the reaction chamber
5
being exhausted in order to maintain a predetermined depressurized state, so that film forming process can take place under a specified process condition. After a completion of the wafer process, the boat
8
is de-elevated and wafers
10
are unloaded therefrom.
Conventionally, the reaction chamber
5
and the waiting room
6
are both either kept in the atmospheric state or supplied with nitrogen gas thereto, while the boat
8
is being loaded into the reaction furnace.
However, when the reaction chambers
5
and the waiting room
6
are both kept in the atmospheric state, formation of natural oxide films on the wafers
10
occurs during the process of loading the boat
8
into the reaction chamber
5
, which entails an adverse effect on the semiconductor device.
On the other hand, by supplying nitrogen gas into the reaction chamber
5
and the waiting room
6
, the formation of the natural oxide film can be dramatically reduced compared to the aforementioned case. Since, however, oxygen can not be completely removed even in the nitrogen atmosphere, natural oxide film formation may not be completely prevented.
Therefore, another method has been introduced, in which the reaction chamber
5
and the waiting room
6
are vacuum-evacuated during the process of transferring the boat
8
between the reaction chamber
5
and the load-lock chamber
7
. In this case, the formation of natural oxide films is further suppressed compared to the aforementioned two cases.
However, it has been found by the inventors of the present invention that while the vacuum-evacuated reaction chamber
5
and the waiting room
6
suppresses formation of natural oxide films, contaminant particles are formed on the wafers
10
.
In particular, significant generation of such contaminant particles was observed during the time at which the boat
8
is loaded into the reaction chamber
5
and the temperature recovery period (recovering temperature loss, which occurs during loading of the boat
8
) of the reaction chamber
5
and also, while the temperature of the wafers
10
was raised to a processing temperature.
SUMMARY OF THE INVENTION
It is therefore, an object of the present invention to provide a substrate processing apparatus and a method for fabricating semiconductor devices, which reduces a formation of natural oxide film and generation of contaminant particles, thus improving quality of semiconductor devices.
In accordance with one aspect of the present invention, there is provided a semiconductor device fabricating method, including the steps of: loading one or more substrates into a boat disposed in a waiting room positioned next to a reaction furnace; vacuum-evacuating the waiting room to a vacuum state at a base pressure; loading the boat into the reaction furnace at a first ambient pressure; and recovering a temperature of the reaction furnace at a second ambient pressure, wherein the first or the second ambient pressure is greater than the base pressure but less than the atmospheric pressure.
In accordance with another aspect of the invention, there is provided a semiconductor device fabricating method, including the steps of: vacuum-evacuating a reaction furnace to a vacuum state at a base pressure; loading a boat having one or more substrates into the reaction furnace; recovering a temperature of the reaction furnace at a recovery pressure; and processing said one or more substrates by supplying one or more processing gases into the reaction furnace, wherein the recovery pressure is greater than the base pressure but less than the atmospheric pressure.
In accordance with still another aspect of the invention, there is provided a semiconductor device fabricating method, including the steps of: vacuum-evacuating a reaction furnace to a vacuum state at a base pressure; increasing a temperature of one or more substrates supported by a boat in the reaction furnace at an ambient pressure; and processing said one or more substrates by supplying one or more processing gases into the reaction furnace, wherein the ambient pressure is greater than the base pressure but less than the atmospheric pressure.
In accordance with still another aspect of the invention, there is provided a semiconductor device fabricating method, including the steps of: loading a boat having one or more substrates into a reaction furnace; vacuum-evacuating the reaction furnace to a vacuum state at base pressure; processing said one or more substrates by supplying one or more first processing gases into the reaction furnace at a first processing temperature and at a first ambient pressure; processing said one or more substrates by supplying one or more second processing gases into the reaction furnace at a second temperature and at a second ambient pressure; and performing a temperature change from the first processing temperature to the second processing temperature at an intermediate ambient pressure; and wherein the intermediate ambient pressure is greater than the base pressure but less than the atmospheric pressure.
In accordance with still another aspect of the invention, there is provided a substrate processing apparatus including: a reaction furnace for processing one or more substrates; a substrate holder for supporting said one or more substrates; a waiting room connected to the reaction furnace; a substrate holder transferring means for transmitting the substrate holder between the waiting room and the reaction furnace; and a pressure controlling means for maintaining the waiting room at a base pressure after loading said one or more substrates into th
Mizuno Norikazu
Ozaki Takashi
Suzaki Ken-ichi
Bacon & Thomas
Ghyka Alexander
Hitachi Kokusai Electric Inc.
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