Method for fabricating a semiconductor device

Details Method for fabricating a semiconductor device Method for fabricating a semiconductor device

1996-06-25

1998-11-17

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

438301, H01L 213205, H01L 21336

Patent

active

058376003

ABSTRACT:
Disclosed is a method for fabricating a semiconductor device, especially suitable for a highly-integrated semiconductor device. In the method, a lower tungsten silicide film having an amorphous construction is formed on a poly silicon film on a gate oxide film formed on a semiconductor substrate. On the lower tungsten silicide film, an upper tungsten silicide film having a plurality of small grains between which gaps are defined. Thereafter, oxide films are formed on the crystallized grains by heat treatment under an oxygen atmosphere.

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