Method for fabricating a semiconductor device

Details Method for fabricating a semiconductor device Method for fabricating a semiconductor device

2007-01-16

2007-01-16

Picardat, Kevin M. (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S629000

Reexamination Certificate

active

10924847

ABSTRACT:
A method for fabricating a semiconductor device that prevents the occurrence of bowing and thickness reduction in a dual damascene method. As shown in FIG.2(B), silicon nitride etching is performed on a semiconductor device in process of fabrication which has a section shown in FIG.2(A). As a result, part of a copper film is oxidized and changes into oxide. Moreover, a CFxdeposit is formed on it. By performing organic insulating film etching by the use of hydrogen plasma in FIG.2(C), however, the oxide is deoxidized to copper and the CFxdeposit is converted into a volatile compound and is removed.

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