Method for fabricating a semiconductor device

Details Method for fabricating a semiconductor device Method for fabricating a semiconductor device

2006-08-01

2006-08-01

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S623000, C438S627000, C438S629000, C438S637000, C438S694000, C438S700000, C257SE21490

Reexamination Certificate

active

07084065

ABSTRACT:
A method for fabricating a semiconductor device that prevents the formation of a side etch caused by fluoride (CFx) produced when a barrier insulating film is etched. As shown in FIG.1(G), an opening in the shape of a wiring trench is made in an interlayer dielectric. Then, as shown in FIG.1(H), a barrier insulating film is etched. As a result, fluoride will be produced. By performing plasma etching by the use of gas which contains hydrogen atoms in the following process shown in FIG.1(I), the fluoride is converted to a highly volatile compound, such as hydrogen fluoride, and is removed.

REFERENCES:
patent: 5405492 (1995-04-01), Moslehi
patent: 5952246 (1999-09-01), Wang et al.
patent: 6177347 (2001-01-01), Liu et al.
patent: 6720249 (2004-04-01), Dalton et al.
Wolf et al., Silicon Processing for the VLSI Era, vol. 1: Process Technology, 1986 Lattice Press, pp. 168, 171-173 and 191-194.

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