Method for fabricating a semiconductor device

Details Method for fabricating a semiconductor device Method for fabricating a semiconductor device

2006-04-25

2006-04-25

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S637000, C438S700000

Reexamination Certificate

active

07033955

ABSTRACT:
The present invention discloses a method for fabricating a semiconductor device wherein precursor and deposition conditions of a bit line hard mask nitride film and a spacer nitride film are varied so that the nitride films are formed to have different etching ratios for sufficient protection of the bit line during an SAC process.

REFERENCES:
patent: 6316349 (2001-11-01), Kim et al.
patent: 6803318 (2004-10-01), Qiao et al.

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