Method for fabricating a semiconductor device

Details Method for fabricating a semiconductor device Method for fabricating a semiconductor device

2005-03-29

2005-03-29

Mulpuri, Savitri (Department: 2812)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

On insulating substrate or layer

C438S481000, C117S105000

Reexamination Certificate

active

06872636

ABSTRACT:
A semiconductor device fabricating method includes the step of supplying BCl3as a doping gas, SiH4as a film forming gas, and H2as a carrier gas to a reaction chamber of a semiconductor device fabricating apparatus, wherein SiH4, BCl3and H2flow in the reaction chamber on the condition that the film forming pressure ranges from about 0.1 to 100 Pa and the film forming temperature ranges from about 400 to 700° C.

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