Method for fabricating a semiconductor device

Details Method for fabricating a semiconductor device Method for fabricating a semiconductor device

1996-03-04

2000-01-11

Mulpuri, Savitri

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438486, H01L 2184

Patent

active

060135441

ABSTRACT:
A method for fabricating a semiconductor device including an active region obtained by utilizing a silicon semiconductor film having crystallinity which is formed on an insulating substrate is disclosed. A crystalline silicon semiconductor film is obtained by introducing catalyst elements for promoting the crystallization into a lower amorphous silicon semiconductor film and then performing a heat treatment onto the lower amorphous silicon semiconductor film. Thereafter, an upper amorphous silicon semiconductor film is formed on the obtained lower crystalline silicon semiconductor film, which is subsequently subjected to a heat treatment so as to obtain an upper crystalline silicon semiconductor film. Then, the upper crystalline silicon semiconductor film is removed. By this process, the catalyst elements remaining in the lower crystalline silicon semiconductor film moves into the upper crystalline silicon semiconductor film. As a result, a concentration of the catalyst elements in the lower crystalline silicon semiconductor film is reduced.

REFERENCES:
patent: 5403772 (1995-04-01), Zhang et al.
patent: 5501989 (1996-03-01), Takayama et al.
patent: 5543352 (1996-08-01), Ohtani et al.
patent: 5550070 (1996-08-01), Funai et al.
patent: 5569610 (1996-10-01), Zhang et al.
patent: 5595923 (1997-01-01), Zhang et al.
patent: 5605846 (1997-02-01), Ohtani et al.
patent: 5614426 (1997-03-01), Funada et al.
patent: 5624851 (1997-04-01), Takayama et al.
patent: 5637515 (1997-06-01), Takemura
patent: 5639698 (1997-06-01), Yamazaki et al
patent: 5756364 (1998-05-01), Tanaka et al.
patent: 5789284 (1998-08-01), Yamazaki et al.
patent: 5837569 (1998-11-01), Makita et al.
patent: 5869389 (1999-02-01), Ding et al.
patent: 5923968 (1999-07-01), Yamazaki et al.
patent: 5940693 (1999-08-01), Maekawa

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