Method for fabricating a self-aligned bipolar transistor...

Details Method for fabricating a self-aligned bipolar transistor... Method for fabricating a self-aligned bipolar transistor...

2006-04-25

2006-04-25

Smith, Zandra V. (Department: 2822)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Having heterojunction

C438S235000

Reexamination Certificate

active

07033898

ABSTRACT:
According to one exemplary embodiment, a bipolar transistor comprises a base having a top surface. The bipolar transistor further comprises a first link spacer and a second link spacer situated on the top surface of the base. The bipolar transistor further comprises a sacrificial post situated between the first and second link spacers, where the first and second link spacers have a height that is substantially less than a height of the sacrificial post. The bipolar transistor also comprises a conformal layer situated over the sacrificial post and the first and second link spacers. According to this exemplary embodiment, the bipolar transistor further comprises a sacrificial planarizing layer situated over the conformal layer, the first and second link spacers, the sacrificial post, and the base. The sacrificial planarizing layer may comprise, for example, an organic material such as an organic BARC (“bottom anti-reflective coating”).

REFERENCES:
patent: 4893273 (1990-01-01), Usami
patent: 5672544 (1997-09-01), Pan
patent: 6624465 (2003-09-01), Chien et al.
patent: 6897504 (2005-05-01), Yaung et al.

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