Semiconductor device manufacturing: process – Making device array and selectively interconnecting – Using structure alterable to nonconductive state
Reexamination Certificate
2006-08-09
2008-12-02
Wilczewski, M. (Department: 2822)
Semiconductor device manufacturing: process
Making device array and selectively interconnecting
Using structure alterable to nonconductive state
C438S215000, C438S281000
Reexamination Certificate
active
07459350
ABSTRACT:
A method for making a semiconductor device having a fuse window above a substrate is disclosed. The semiconductor device has at least one fuse protection circuit located under the fuse window. The fuse protection circuit includes a fuse having a first end connected to a first voltage and a second end. A first transistor having a drain is connected to the second end of the fuse, a gate for receiving an input signal, and a source is connected to a second voltage. A second transistor having a drain is connected to the second end of the fuse, a gate, and a source is connected to the second voltage. A first diode having an anode and a cathode, the anode of the first diode is connected to the second voltage and the cathode of the first diode is connected to the second end of the fuse. A second diode having an anode and a cathode, the anode of the second diode is connected to the second end of the fuse and the cathode of the second diode is connected to the first voltage. A resistor having a first end is connected to the anode of the second diode, and a second end. An inverter having an input end is connected to the second end of the resistor, and an output end is connected to the gate of the second transistor for providing an output signal.
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Haynes and Boone LLP
Taiwan Semiconductor Manufacturing Company , Ltd.
Thomas Toniae M.
Wilczewski M.
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