Method for fabricating a probing pad of an integrated...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S503000, C257SE23024

Reexamination Certificate

active

07456479

ABSTRACT:
A method for fabricating a probing pad is disclosed. A substrate having thereon a dielectric layer is provided. An inlaid metal wiring is formed in the dielectric layer. The inlaid metal wiring and the dielectric layer are covered with a passivation dielectric film. A portion of the passivation dielectric film is then etched away to form a reinforcement pattern on the inlaid metal wiring. The reinforcement pattern has inter-space that exposes a portion of the underlying inlaid metal wiring. A conductive pad is formed over the reinforcement pattern and the passivation dielectric film. The conductive pad fills the inter-space of the reinforcement pattern.

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