Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2007-12-27
2010-10-19
Quach, Tuan N. (Department: 2893)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S160000, C438S958000, C257SE21414
Reexamination Certificate
active
07816193
ABSTRACT:
A method for fabricating a pixel structure of a liquid crystal device is provided. The method comprises providing a substrate defining a thin film transistor (TFT) region and a display region thereon. An opaque conductive layer is formed on the TFT region, and a transparent pixel electrode is formed on the display region. A patterned photoresist passivation layer is formed by backside exposure process on the TFT region, wherein the opaque conductive layer serves as the photo-mask during the backside exposure process. The photoresist passivation layer is subjected to a middle bake process to be reflowed, resulting in a complete covering of the opaque conductive layer.
REFERENCES:
patent: 7098062 (2006-08-01), Shih
patent: 7638375 (2009-12-01), Chin et al.
patent: 7687325 (2010-03-01), Yamazaki et al.
patent: 2009/0108260 (2009-04-01), Lin et al.
patent: 1353328 (2002-06-01), None
patent: 1632675 (2005-06-01), None
CN Office Action mailed Jul. 4, 2008.
Au Optronics Corp.
Quach Tuan N.
Thomas Kayden Horstemeyer & Risley
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