Method for fabricating a patterned layer on a semiconductor...

Details Method for fabricating a patterned layer on a semiconductor... Method for fabricating a patterned layer on a semiconductor...

2006-09-12

2006-09-12

Barreca, Nicole (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

C430S317000, C430S950000

Reexamination Certificate

active

07105279

ABSTRACT:
During the patterning of a semiconductor layer, an N-free SiOxlayer is produced under an acid-forming photoresist layer in order to prevent a resist degradation. The Si content of the grown SiOxlayer being varied in order to set a desired extinction coefficient k and a desired refractive index n. The SiOxlayer formation is effected by a vapor phase deposition, SiH4and O2being used as starting gases.

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