Method for fabricating a pattern and method for...

Details Method for fabricating a pattern and method for... Method for fabricating a pattern and method for...

2006-05-16

2006-05-16

Schillinger, Laura M. (Department: 2813)

Semiconductor device manufacturing: process

Chemical etching

C438S706000, C438S725000

Reexamination Certificate

active

07045462

ABSTRACT:
A method for fabricating a pattern, includes: delineating a mask pattern on at least a portion of an underlying layer; etching a portion of the mask pattern; irradiating an incident light on the mask pattern to which the etching is performed and detecting a reflected light produced by reflecting the incident light after the incident light is transmitted through the mask pattern; obtaining a reflected interference spectrum; and calculating a pattern width of the mask pattern using data of the reflected interference spectrum, the reflected interference spectrum being in a wavelength range of not less than two times a pitch of the mask pattern.

REFERENCES:
patent: 6423457 (2002-07-01), Bell
patent: 6483965 (2002-11-01), Napier et al.
patent: 6767594 (2004-07-01), Miroshin et al.
patent: 2004/0058533 (2004-03-01), Sakai et al.
patent: 2004/0179202 (2004-09-01), Sezginer
patent: 2000-100797 (2000-04-01), None
patent: 2002-93870 (2002-03-01), None
patent: 2002-093870 (2002-03-01), None
patent: 2002-261043 (2002-09-01), None
Kikuta, “Subwavelength Diffraction Gratings,” O Plus E (1999), 21:543-550.
Rytov, “Electromagnetic Properties of a Finely Stratified Medium,” Soviet Physics JETP (May 1956), 2:466-475.
First Office Action issued by Chinese Patent Office on Jun. 10, 2005, in Chinese Patent Application No. 03134814.9.

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