Method for fabricating a nano-imprinting mold

Details Method for fabricating a nano-imprinting mold Method for fabricating a nano-imprinting mold

2008-05-06

2008-05-06

Pham, Thanhha S. (Department: 2813)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S745000, C438S753000, C438S756000, C257SE21305

Reexamination Certificate

active

07368395

ABSTRACT:
An imprinting apparatus and method of fabrication provide a mold having a pattern for imprinting. The apparatus includes a semiconductor substrate polished in a [110] direction. The semiconductor substrate has a (110) horizontal planar surface and vertical sidewalls of a wet chemical etched trench. The sidewalls are aligned with and therefore are (111) vertical lattice planes of the semiconductor substrate. The semiconductor substrate includes a plurality of vertical structures between the sidewalls, wherein the vertical structures may be nano-scale spaced apart. The method includes wet etching a trench with spaced apart (111) vertical sidewalls in an exposed portion of the (110) horizontal surface of the semiconductor substrate along (111) vertical lattice planes. A chemical etching solution is used that etches the (111) vertical lattice planes slower than the (110) horizontal lattice plane. The method further includes forming the imprinting mold.

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