Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Physical stress responsive
Reexamination Certificate
2007-11-28
2010-02-23
Lindsay, Jr., Walter L (Department: 2812)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Physical stress responsive
C438S637000, C257SE21495, C257SE21499, C359S290000
Reexamination Certificate
active
07666702
ABSTRACT:
A method for fabricating a microstructure is to form at least one insulation layer including a micro-electro-mechanical structure therein over an upper surface of a silicon substrate. The micro-electro-mechanical structure includes at least one microstructure and a metal sacrificial structure that are independent with each other. In the metal sacrificial structure are formed a plurality of metal layers and a plurality of metal via layers connected to the respective metal layers. A barrier layer is formed over an upper surface of the insulation layer, and an etching stop layer is subsequently formed over a lower surface of the silicon substrate. An etching operation is carried out from the lower surface of the silicon substrate to form a space corresponding to the micro-electro-mechanical structure, and then the metal sacrificial structure is etched, thus achieving a microstructure suspension.
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patent: 2006/0285191 (2006-12-01), Yang
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patent: 2009/0229369 (2009-09-01), Tan
patent: 2009/0243084 (2009-10-01), Tan
Li Sheng-Hung
Liu Cheng-Yen
Tan Siew-Seong
Yeh Li-Ken
Lindsay, Jr. Walter L
MEMSmart Semiconductor Corp.
Shia, Banger
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