Method for fabricating a micro structure

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element

Reexamination Certificate

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Details

C438S060000, C438S075000, C257SE21170, C257SE21189, C257SE21278, C257SE21613, C257SE29228

Reexamination Certificate

active

07416908

ABSTRACT:
A method for fabricating a micro structure includes depositing a first layer of a first material over a substrate; patterning a first hard mask over the first layer; depositing a second layer of a second material over the first layer and the first hard mask; patterning a second hard mask over the second layer; and selectively removing the first material and the second material not covered by any of the first mask and the second mask to produce over the substrate the micro structure having a first structure portion having a first height and a second structure portion having a second height.

REFERENCES:
patent: 6356378 (2002-03-01), Huibers
patent: 6396619 (2002-05-01), Huibers et al.
patent: 6529310 (2003-03-01), Huibers et al.
patent: 6538800 (2003-03-01), Huibers
patent: 6827866 (2004-12-01), Novotny
patent: 6992810 (2006-01-01), Pan et al.
patent: 2002/0071166 (2002-06-01), Jin et al.
patent: 2002/0071169 (2002-06-01), Bowers et al.
patent: 2005/0128564 (2005-06-01), Pan

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