Method for fabricating a metallization stack structure to improv

Details Method for fabricating a metallization stack structure to improv Method for fabricating a metallization stack structure to improv

1997-07-23

1999-04-06

Quach, T. N.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438687, 438927, 257762, H01L 2128

Patent

active

058918027

ABSTRACT:
There is provided an improved metallization stack structure and a method for fabricating the same so as to produce a higher electromigration resistance and yet maintain a relatively low resistivity. The metallization stack structure includes a pure copper layer sandwiched between a top thin doped copper layer and a bottom thin doped copper layer. The top and bottom thin doped copper layers produce a higher electromigration resistance. The pure copper layer produces a relatively low resistivity.

REFERENCES:
patent: 5391517 (1995-02-01), Gelatos et al.
patent: 5545927 (1996-08-01), Farooq et al.
patent: 5656860 (1997-08-01), Lee
patent: 5719447 (1998-02-01), Gardner

Affiliated with

Also associated with

Rating

Method for fabricating a metallization stack structure to improv does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating a metallization stack structure to improv, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating a metallization stack structure to improv will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1371202