Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Patent
1999-05-07
2000-10-17
Bowers, Charles
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
438197, 438DIG947, H01L 213205
Patent
active
061331295
ABSTRACT:
A metal structure is fabricated with a reduced length that is beyond that achievable from photolithography by using a silicidation anneal to control the reduced length. Generally, the present invention includes a step of forming a base metal structure on a semiconductor substrate. The base metal structure has a first predetermined length defined by sidewalls on ends of the first predetermined length of the base metal structure. The present invention also includes the step of depositing a layer of silicon on the sidewalls of the base metal structure, and this layer of silicon has a predetermined thickness. The layer of silicon reacts with the base metal structure at the sidewalls of the base metal structure in a silicidation anneal to form metal silicide comprised of the layer of silicon that has reacted with the base metal structure at the sidewalls of the base metal structure. The base metal structure has a second predetermined length that is reduced from the first predetermined length when the layer of silicon has consumed into the sidewalls of the base metal structure after the silicidation anneal. The second predetermined length depends on the predetermined thickness of the layer of silicon deposited on the sidewalls of the base metal structure before the silicidation anneal. After the silicidation anneal, the metal silicide is then removed from the sidewalls of the base metal structure. A remaining portion of the base metal structure, after the metal silicide is removed, forms the metal structure of the present invention having the reduced length that is substantially equal to the second predetermined length. The present invention may be used to particular advantage when the metal structure having the reduced length forms a gate electrode of a MOSFET (Metal Oxide Semiconductor Field Effect Transistor).
REFERENCES:
patent: 5707721 (1998-01-01), Jang
patent: 6060377 (2000-05-01), Xiang et al.
Bell Scott A.
Xiang Qi
Yang Chih-Yuh
Advanced Micro Devices , Inc.
Bowers Charles
Choi Monica H.
Pert Evan
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