Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-09-13
2005-09-13
Eckert, George (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S380000, C257S533000, C257S758000, C257S759000, C257S760000, C438S171000, C438S190000, C438S210000, 43
Reexamination Certificate
active
06943414
ABSTRACT:
According to one exemplary embodiment, an integrated circuit chip comprises a first interconnect metal layer. The integrated circuit chip further comprises a first intermediate dielectric layer situated over the first interconnect metal layer. The integrated circuit chip further comprises a metal resistor situated over the first intermetallic dielectric layer and below a second intermetallic dielectric layer. The integrated circuit chip further comprises a second interconnect metal layer over the second intermetallic dielectric layer. The integrated circuit chip further comprises a first intermediate via connected to first terminal of the metal resistor, where the first intermediate via is further connected to a first metal segment patterned in the second interconnect metal layer. The integrated circuit chip further comprises a second intermediate via connected to a second terminal of the metal resistor, where the second intermediate via is further connected to a second metal segment patterned in the second interconnect metal layer.
REFERENCES:
patent: 3862017 (1975-01-01), Tsunemitsu et al.
patent: 3868720 (1975-02-01), New et al.
patent: 4795921 (1989-01-01), Kato et al.
patent: 5120572 (1992-06-01), Kumar
patent: 5270493 (1993-12-01), Inoue et al.
patent: 5422307 (1995-06-01), Ishii
patent: 5525831 (1996-06-01), Ohkawa et al.
patent: 5929510 (1999-07-01), Geller et al.
patent: 6117789 (2000-09-01), Lee
patent: 6232194 (2001-05-01), Yaung et al.
patent: 6627539 (2003-09-01), Zhao et al.
patent: 06334137 (1994-12-01), None
Howard David
Kar Roy Arjun
Liu Q.Z.
Chu Chris C.
Eckert George
Farjami & Farjami LLP
Newport Fab LLC
LandOfFree
Method for fabricating a metal resistor in an IC chip and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for fabricating a metal resistor in an IC chip and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating a metal resistor in an IC chip and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3436905