Method for fabricating a metal oxide semiconductor field effect

Details Method for fabricating a metal oxide semiconductor field effect Method for fabricating a metal oxide semiconductor field effect

1996-02-27

1998-10-06

Dutton, Brian

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

438542, 438652, 438660, H01L 2144, H01L 2148, H01L 21265

Patent

active

058175474

ABSTRACT:
There is disclosed a method for fabricating a MOSFET, comprising the steps of: forming a gate oxide on a semiconductor substrate; depositing an intrinsic semiconductor layer on said gate oxide; forming a doped semiconductor layer on said intrinsic semiconductor layer; annealing said intrinsic semiconductor layer and said doped semiconductor layer, to diffuse impurities within said doped semiconductor layer into said intrinsic semiconductor layer; and patterning said intrinsic semiconductor layer and said doped semiconductor layer, to form a gate electrode, whereby the property degradation of gate oxide attributable to impurities, the increase in the thickness of gate oxide film attributable to infiltration of impurities and the degradation in operation of device can be prevented.

REFERENCES:
patent: 4354309 (1982-10-01), Gardiner et al.
patent: 4643527 (1987-02-01), Magarino et al.
patent: 5350698 (1994-09-01), Huang et al.
patent: 5410174 (1995-04-01), Kalnitsky
patent: 5441904 (1995-08-01), Kim et al.

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