Method for fabricating a metal-insulator-metal capacitor

Details Method for fabricating a metal-insulator-metal capacitor Method for fabricating a metal-insulator-metal capacitor

2007-01-30

2007-01-30

Smith, Bradley K. (Department: 2891)

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

C438S387000, C438S675000, C438S637000, C257S534000, C257SE21477

Reexamination Certificate

active

10906538

ABSTRACT:
A method for fabricating a capacitor is disclosed. First, a dielectric layer is disposed on a semiconductor substrate. Next, at least one dual damascene opening and at least one capacitor opening are formed in the dielectric layer. Next, a first conductive layer is disposed on the surface of the dielectric layer, the bottom and sidewall of the capacitor opening, and the dual damascene opening. Next, an insulating layer is formed on the first conductive layer and a second conductive layer is disposed on the insulating layer. Following that, a planarization process is performed to remove the second conductive layer, the insulating layer, and the first conductive layer on the dielectric surface for forming a capacitor and a dual damascene conductor.

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