Method for fabricating a memory device

Details Method for fabricating a memory device Method for fabricating a memory device

2006-04-11

2006-04-11

Nguyen, Ha (Department: 2812)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Diffusing a dopant

C438S514000, C438S522000, C438S527000, C438S530000, C438S542000, C438S560000

Reexamination Certificate

active

07026230

ABSTRACT:
The present invention is a method for fabricating a memory device. In one embodiment, an impurity concentration is created in a semiconductor substrate of a memory device. An annealing process is then performed. A second impurity concentration is created in a second region of the semiconductor substrate and a second annealing process is performed.

REFERENCES:
patent: 2002/0102793 (2002-08-01), Wu

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