Method for fabricating a high density composite MIM...

Details Method for fabricating a high density composite MIM... Method for fabricating a high density composite MIM...

2006-05-09

2006-05-09

Graybill, David E. (Department: 2822)

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

Reexamination Certificate

active

07041569

ABSTRACT:
According to a disclosed embodiment, a composite MIM capacitor comprises a lower electrode of a lower MIM capacitor situated in a lower interconnect metal layer of a semiconductor die. The composite MIM capacitor further comprises an upper electrode of the lower MIM capacitor situated within a lower interlayer dielectric, where the lower interlayer dielectric separates the lower interconnect metal layer from an upper interconnect metal layer. A lower electrode of the upper MIM capacitor is situated in the upper interconnect metal layer. An upper electrode of the upper MIM capacitor is situated within the upper interlayer dielectric which is, in turn, situated over the upper interconnect metal layer. The upper electrode of the lower MIM capacitor is connected to the lower electrode of the upper MIM capacitor while the lower electrode of the lower MIM capacitor is connected to the upper electrode of the upper MIM capacitor.

REFERENCES:
patent: 6200629 (2001-03-01), Sun
patent: 6710425 (2004-03-01), Bothra
patent: 6734489 (2004-05-01), Morimoto et al.
patent: 6746914 (2004-06-01), Kai et al.
patent: 6919233 (2005-07-01), Papa Rao et al.
patent: 2002/0038903 (2002-04-01), Tsau
patent: 2003/0150384 (2003-08-01), Baude et al.
patent: 2004/0077141 (2004-04-01), Kim

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