Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Recessed oxide by localized oxidation
Patent
1998-12-10
2000-08-29
Chaudhari, Chandra
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Recessed oxide by localized oxidation
438297, 438226, 257519, H01L 2176
Patent
active
061108030
ABSTRACT:
A method for fabricating a high-bias device is provided. The method contains forming an N-type epitaxial silicon layer over a P-type substrate. At least a first stacked double well is formed in the epitaxial silicon layer at a region, where a field oxide (FOX) structure is to be formed. A second stacked double well is formed in the epitaxial silicon layer at a region, where a source region is to be formed inside. A FOX structure is formed on the first stacked double well. A gate oxide layer is formed on the epitaxial silicon layer. A conductive gate layer is formed over the substrate to cover a region extending from a portion of the FOX structure to a portion of the second stacked double well. A source region is formed in the second stacked double well with the second-type dopant. A drain region is formed in the epitaxial silicon layer at the opposite side of the FOX layer.
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Blum David S
Chaudhari Chandra
United Microelectronics Corp.
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