Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having schottky gate
Reexamination Certificate
2005-01-11
2005-01-11
Nguyen, Thanh (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having schottky gate
C438S933000, C438S169000
Reexamination Certificate
active
06841435
ABSTRACT:
A GaInP epitaxial stacking structure and fabrication method thereof, and a FET transistor using this structure are provided wherein, stacked upon a GaAs single-crystal substrate are at least a buffer layer, a GaZIn1-ZAs (0<Z≦1) channel layer, and a GaYIn1−YP (0<Y≦1) electron-supply layer joined to the channel layer, wherein the GaInP epitaxial stacking structure includes a region within the electron-supply layer wherein the gallium composition ratio (Y) decreases from the side of the junction interface with the channel layer toward the opposite side.
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Kasahara Akira
Kimura Masahiro
Okano Taichi
Udagawa Takashi
Huynh Yennhu B
Nguyen Thanh
Showa Denko K.K.
Sughrue & Mion, PLLC
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