Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2011-03-29
2011-03-29
Landau, Matthew C (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S096000, C438S097000, C438S482000, C438S486000, C438S488000, C257S049000, C257S051000, C257S052000, C257S057000, C257S059000, C257S064000, C257S066000, C257S070000, C257S072000, C257SE27132, C257SE29289
Reexamination Certificate
active
07915103
ABSTRACT:
The method for fabricating a flat panel display includes performing a first crystallization process to re-crystallize an amorphous silicon layer on a glass substrate to make the amorphous silicon layer become a polysilicon layer, forming a patterned absorbing layer to cover an active area pattern of a driving TFT and to expose portions of the polysilicon layer, performing a second crystallization process to re-crystallization the exposed portions of the polysilicon layer so that the exposed portions of the polysilicon layer has a different grain structure from the grain structure of the driving TFT, removing the patterned absorbing layer, and removing portions of the polysilicon layer to form an active area of the driving TFT and an active area of a switching TFT area in the exposed portions of the polysilicon layer of each sub-pixel.
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Liu Chun-Yen
Tseng Chang-Ho
Chimei Innolux Corporation
Landau Matthew C
Malek Maliheh
Thomas Kayden Horstemeyer & Risley LLP
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