Method for fabricating a fin-shaped semiconductor structure...

Details Method for fabricating a fin-shaped semiconductor structure... Method for fabricating a fin-shaped semiconductor structure...

2011-03-08

2011-03-08

Lindsay, Jr., Walter L (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C257SE21629

Reexamination Certificate

active

07902005

ABSTRACT:
A fin-shaped structure is formed from a semiconductor material. The fin-shaped structure is processed to generate a tensile strain within the semiconductor material along a longitudinal direction of the fin.

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Yang, M., et al., “High Performance CMOS Fabricated on Hybrid Substrate With Different Crystal Orientations,” IEEE, Mar. 2003, 4 pages.
Chen, C., et al., “Stress Memorization Technique (SMT) by Selectively Strained-Nitride Capping for Sub-65nm High-Performance Strained-Si Device Application,” IEEE 2004 Symposium on VSLI Technology, Jun. 15-17, 2004, pp. 56-57.
Irie, H., et al., “In-Plane Mobility Anisotropy and Universality Under Uni-Axial Strains in n- and p-MOS Inversion Layers on (100), [110], and (111) Si,” IEEE, 2004, 4 pages.

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