Method for fabricating a film bulk acoustic resonator

Details Method for fabricating a film bulk acoustic resonator Method for fabricating a film bulk acoustic resonator

2007-10-16

2007-10-16

Tugbang, A. Dexter (Department: 3729)

Metal working

Piezoelectric device making

C029S594000, C029S846000, C029S847000, C029S832000, C029S830000, C029S831000, C310S31300R

Reexamination Certificate

active

10827532

ABSTRACT:
A method for fabricating a film bulk acoustic resonator (FBAR) includes depositing a dielectric layer on a substrate, providing a sacrificial layer on part of the dielectric layer; providing a bottom electrode on part of the sacrificial layer on part of the dielectric layer; providing a piezoelectric layer on the bottom electrode; patterning a top electrode on the piezoelectric layer; and removing the sacrificial layer. The substrate may have a cavity receiving the sacrificial layer. As a result, a cantilevered resonator having an air gap between the bottom electrode and the dielectric layer may be simply fabricated.

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