Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Charge transfer device
Patent
1998-11-17
2000-09-05
Niebling, John F.
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Charge transfer device
438225, 438233, 438270, 438268, 438297, 438424, 438425, 438430, 438439, 438637, H01L 21339
Patent
active
061141941
ABSTRACT:
A method for fabricating a field device transistor includes forming a gate oxide layer of the field device transistor by performing a thermal oxidation process. By properly controlling the thickness of the gate oxide layer, the threshold voltage of the field device transistor can be suppressed in under 5 volts to provide sufficient protection for the internal circuit. The method of the invention includes forming a gate oxide layer of a field device transistor by performing a thermal oxidation process instead of a field oxide layer in order to obtain a better control on the thickness of the gate oxide layer.
REFERENCES:
patent: 4602267 (1986-07-01), Shirato
patent: 5371395 (1994-12-01), Hawkins
patent: 5885875 (1999-03-01), Hsu
patent: 5888880 (1999-03-01), Gardner et al.
patent: 5895958 (1999-04-01), Miki
patent: 5946573 (1999-08-01), Hsu
patent: 5946577 (1999-08-01), Tanaka
patent: 5960290 (1999-09-01), Hsu
patent: 5972775 (1999-10-01), Chen
patent: 5972778 (1999-10-01), Hamada
patent: 5982600 (1999-11-01), Cheng
patent: 5994190 (1999-11-01), Hashimoto
patent: 6008137 (1999-12-01), Lee et al.
patent: 6013559 (2000-01-01), Wu et al.
patent: 6022778 (2000-02-01), Contiero et al.
patent: 6033969 (2000-03-01), Yoo et al.
patent: 6040222 (2000-03-01), Hsu et al.
Hack Jonathan
Niebling John F.
United Microelectronics Corp.
LandOfFree
Method for fabricating a field device transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for fabricating a field device transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating a field device transistor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2211363