Method for fabricating a ferroelectric capacitor

Details Method for fabricating a ferroelectric capacitor Method for fabricating a ferroelectric capacitor

1996-09-03

2000-04-11

Chang, Joni

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

438240, H01L 2100

Patent

active

060487372

ABSTRACT:
A ferroelectric capacitor taking a multilayer structure wherein a conductive oxide layer which is formed between a metal electrode and a ferroelectric layer, capable of enhancing the fatigue behavior in addition to reducing the leakage current. The multilayer structure can be fabricated by depositing a silicon oxide (SiO.sub.2) layer, an adhesive layer, a bottom metal layer, a lower conductive oxide layer, a ferroelectric layer, an upper conductive oxide layer and a top metal electrode layer are deposited over a silicon substrate, in sequence.

REFERENCES:
patent: 5005102 (1991-04-01), Larson
patent: 5142437 (1992-08-01), Kammerdiner et al.
patent: 5254217 (1993-10-01), Maniar et al.
patent: 5471363 (1995-11-01), Mihara
patent: 5491102 (1996-02-01), Desu et al.
patent: 5519235 (1996-05-01), Ramesh
patent: 5555486 (1996-09-01), Kingon et al.

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