Method for fabricating a dopant region

Details Method for fabricating a dopant region Method for fabricating a dopant region

1999-09-20

2000-10-17

Nelms, David

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Diffusing a dopant

438542, H01L 2122

Patent

active

061331260

ABSTRACT:
A method for fabricating a dopant region is disclosed. The dopant region is formed by providing a semiconductor substrate that has a surface. An electrically insulating intermediate layer is applied to the surface. A doped semiconductor layer is then applied to the electrically insulating intermediate layer, the semiconductor layer being of a first conductivity type and contains a dopant of the first conductivity type. A temperature treatment of the semiconductor substrate at a predefined diffusion temperature is performed, so that the dopant diffuses partially out of the semiconductor layer through the intermediate layer into the semiconductor substrate and forms there a dopant region of the first conductivity type. The electrical conductivity of the intermediate layer is modified, so that an electrical contact between the semiconductor substrate and the semiconductor layer is produced through the intermediate layer.

REFERENCES:
patent: 6017778 (2000-01-01), Pezzani

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