Method for fabricating a diffusion barrier metal layer in a semi

Details Method for fabricating a diffusion barrier metal layer in a semi Method for fabricating a diffusion barrier metal layer in a semi

1996-05-15

1997-06-10

Niebling, John

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438653, H01L 2144, H01L 21443

Patent

active

056375336

ABSTRACT:
A method for fabricating a diffusion barrier metal layer of a semiconductor device for preventing a material of a metal wiring of said semiconductor device from being diffused into a silicon layer under said metal wiring is disclosed including the steps of: exposing the surface of said silicon layer to oxygen plasma, to prevent a silicide from being formed at the interface between said silicon layer and diffusion barrier metal layer; forming a first diffusion barrier metal layer on said silicon layer; implanting oxygen ions into said first diffusion barrier metal layer; and forming a second diffusion barrier metal layer on said first diffusion barrier metal layer.

REFERENCES:
patent: 5183775 (1993-02-01), Levy
patent: 5555486 (1996-09-01), Kingon et al.

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