Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1998-01-12
2000-01-25
Bowers, Charles
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438597, 438598, 438453, H01L 218242
Patent
active
060178132
ABSTRACT:
A process for forming a damascene landing pad structure, used to connect a bit line structure, of a semiconductor memory device, to an underlying source and drain region, of a transfer gate transistor, has been developed. The process features the formation of a dual shaped, landing pad opening in an insulator layer, comprised of a first shaped opening, exposing an underlying source and drain region, and an enlarged, second shape opening, exposing non-active device regions. Polysilicon deposition and patterning result in the formation of the damascene landing pad structure, in the dual shaped, landing pad opening. Insulator deposition is followed by the opening of a bit line via hole, exposing the top surface of the damascene landing pad structure, in a region in which the damascene landing pad structure overlays a non-active device region. This is followed by the formation of the bit line structure, contacting the top surface of the damascene landing pad structure, exposed in the bit line via hole.
REFERENCES:
patent: 5529953 (1996-06-01), Shoda
patent: 5602423 (1997-02-01), Jain
patent: 5614765 (1997-03-01), Avanzino et al.
patent: 5622883 (1997-04-01), Kim
patent: 5635423 (1997-06-01), Huang et al.
patent: 5830791 (1998-11-01), Lee et al.
patent: 5834349 (1998-11-01), Tseng
patent: 5858833 (1999-01-01), Lee et al.
patent: 5866453 (1999-02-01), Prall et al.
Ackerman Stephen B.
Bowers Charles
Pert Evan
Saile George O.
Vanguard International Semiconductor Corporation
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