Method for fabricating a carrier substrate

Details Method for fabricating a carrier substrate Method for fabricating a carrier substrate

2007-06-05

2007-06-05

Kunemund, Robert (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

C117S089000, C117S094000, C117S096000, C117S915000

Reexamination Certificate

active

10716901

ABSTRACT:
A method for fabricating a carrier substrate. The technique includes providing a crystalline or mono-crystalline base substrate, growing a stiffening layer on a front face of the base substrate at a thickness sufficient to form a carrier substrate for subsequent processing, and detaching the stiffening layer from the base substrate to obtain the carrier substrate and a remainder of the base substrate. The carrier substrate is suitable for use in growing high quality homo-epitaxial or hetero-epitaxial films thereon.

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